收藏本站
DMN3135LVT
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
30V
R DS(on)
60m Ω @ V GS = 10V
100m Ω @ V GS = 4.5V
I D
T A = 25°C
3.5A
2.8A
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
?
Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
? Case: TSOT26
? Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
?
?
?
Backlighting
DC-DC Converters
Power management functions
?
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
TSOT26
Top View
Ordering Information (Note 4)
G1 1
S2 2
G2 3
Top View
6 D1
5 S1
4 D2
Equivalent Circuit
Part Number
DMN3135LVT-7
Case
TSOT26
Packaging
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
31D = Product Type Marking Code
31D
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
1 of 6
www.diodes.com
May 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN3150L-7 MOSFET N-CH 28V 3.2A SOT23-3
DMN3150LW-7 MOSFET N-CH 28V 1.6A SC70-3
DMN3200U-7 MOSFET N-CH 30V 2.2A SOT23-3
DMN32D2LDF-7 MOSFET 2N-CH 30V 400MA SOT353
DMN32D2LFB4-7 MOSFET N-CH 30V 300MA 3-DFN
DMN32D2LV-7 MOSFET N-CH DUAL 30V SOT-563
DMN3300U-7 MOSFET N-CH 30V 2A SOT23-3
DMN3404L-7 MOSFET N-CH 30V 5.8A SOT-23
相关代理商/技术参数
DMN3150L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3150L-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3150LW 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3150LW-7 功能描述:MOSFET 0.35W 28V 1.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3200U 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U-7 功能描述:MOSFET 650mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN32D2LDF 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMMON SOURCE DUAL N-CHANNEL
DMN32D2LDF-7 功能描述:MOSFET 350mw 30V DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube